This study provides a detailed analysis of the temperature-dependent electrophysical properties and current-voltage (I-V) characteristics of p-n junction structures based on Silicon (Si) and Gallium Arsenide (GaAs). The investigation spans a temperature range of 0–1000 K, examining key parameters su...
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| Egile Nagusiak: | , |
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| Formatua: | Artikulua |
| Sarrera elektronikoa: | https://doaj.org/article/1cdd7680beae47c4a4109a38c2173bf5 |
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