In the realm of electronics, the foundational passive components—resistors, inductors, and capacitors—are well-established. However, in 1971, Leon Chua introduced a theoretical fourth element, the memristor, identified by its distinctive characteristic of memristance and its...
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| Online pristup: | https://doaj.org/article/b25a24b7675c437d82a84ff63b12022c |
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| _version_ | 1859433675326750720 |
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| author | Sándor Csikós Ádám Bálint József Sárosi |
| author_facet | Sándor Csikós Ádám Bálint József Sárosi |
| date_str_mv | 2024-12-01T00:00:00Z |
| description | In the realm of electronics, the foundational passive
components—resistors, inductors, and capacitors—are
well-established. However, in 1971, Leon Chua introduced a
theoretical fourth element, the memristor, identified by its
distinctive characteristic of memristance and its manifestation in
a pinched hysteresis loop. This intriguing property suggests
potential applications beyond conventional electronics,
particularly in modelling hysteresis phenomena across various
domains. This paper delves into the exploration of memristance as
a mathematical framework for simulating hysteresis in electrical
and mechanical systems. We commence by elucidating the theoretical
underpinnings of memristance and its hysteresis behaviour,
followed by a comprehensive overview of existing hysteresis
models. Subsequently, we propose a novel approach that leverages
the memristor model to offer enhanced insights and predictive
capabilities for hysteresis in these systems. Through analytical
examination and simulation studies, we demonstrate the versatility
and applicability of the memristor model, underscoring its
potential as a universal tool for hysteresis modelling. This
research not only broadens the understanding of memristive
properties but also opens new avenues for cross-disciplinary
applications, ranging from electronic circuit design to mechanical
system analysis. |
| doi_str | 10.14232/analecta.2024.4.14-20 |
| format | Article |
| id | oai_oai_doaj.org_article_b25a24b7675c437d82a84ff63b12022c |
| issn_str_mv | 2064-7964 |
| language_str_mv | EN |
| oai_datestamp_str | 2025-01-01T16:52:14Z |
| oai_identifier_str | oai:doaj.org/article:b25a24b7675c437d82a84ff63b12022c |
| publisher_str | University of Szeged |
| relation_str_mv | https://www.analecta.hu/index.php/analecta/article/view/45841 https://doaj.org/toc/2064-7964 |
| source_str | JOURNAL_A |
| source_txt | Analecta, Vol 18, Iss 4, Pp 14-20 (2024) |
| spellingShingle | Modelling Hysteresis with Memristors Sándor Csikós Ádám Bálint József Sárosi |
| subject_str_mv | Engineering (General). Civil engineering (General) TA1-2040 Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| title | Modelling Hysteresis with Memristors |
| type_str | article |
| url | https://doaj.org/article/b25a24b7675c437d82a84ff63b12022c |