This paper presents the findings of a study on the current-voltage characteristics (IVC) and current self-oscillations in n++-p(Si)-p+ structures made from heavily compensated silicon. We observed that the self-oscillations in manganese-doped silicon are linked to the injection of holes. During our...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| 格式: | 文件 |
| 在线阅读: | https://doaj.org/article/896a6f804f214269927656e50dfa679a |
| 标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
成为第一个发表评论!