This paper presents the findings of a study on the current-voltage characteristics (IVC) and current self-oscillations in n++-p(Si)-p+ structures made from heavily compensated silicon. We observed that the self-oscillations in manganese-doped silicon are linked to the injection of holes. During our...
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| フォーマット: | 論文 |
| オンライン･アクセス: | https://doaj.org/article/896a6f804f214269927656e50dfa679a |
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