This paper presents the findings of a study on the current-voltage characteristics (IVC) and current self-oscillations in n++-p(Si)-p+ structures made from heavily compensated silicon. We observed that the self-oscillations in manganese-doped silicon are linked to the injection of holes. During our...

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Egile Nagusiak:	Kutub Ayupov, Hayrulla Zikrillaev, Elyor Saitov, Nigora Abdullaeva, Zabarjad Umarkhojayeva, Mirafzal Yakhyayev
Formatua:	Artikulua
Sarrera elektronikoa:	https://doaj.org/article/896a6f804f214269927656e50dfa679a
Etiketak:	Etiketa erantsi Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!