This study provides a detailed analysis of the temperature-dependent electrophysical properties and current-voltage (I-V) characteristics of p-n junction structures based on Silicon (Si) and Gallium Arsenide (GaAs). The investigation spans a temperature range of 0–1000 K, examining key parameters su...

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Ngā kaituhi matua:	Jo`shqin Abdullayev, Ibrokhim Sapaev
Hōputu:	Tuhinga
Urunga tuihono:	https://doaj.org/article/1cdd7680beae47c4a4109a38c2173bf5
Ngā Tūtohu:	Tāpirihia he Tūtohu Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!