This study provides a detailed analysis of the temperature-dependent electrophysical properties and current-voltage (I-V) characteristics of p-n junction structures based on Silicon (Si) and Gallium Arsenide (GaAs). The investigation spans a temperature range of 0–1000 K, examining key parameters su...

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Hauptverfasser:	Jo`shqin Abdullayev, Ibrokhim Sapaev
Format:	Artikel
Online-Zugang:	https://doaj.org/article/1cdd7680beae47c4a4109a38c2173bf5
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