This study provides a detailed analysis of the temperature-dependent electrophysical properties and current-voltage (I-V) characteristics of p-n junction structures based on Silicon (Si) and Gallium Arsenide (GaAs). The investigation spans a temperature range of 0–1000 K, examining key parameters su...

全面介绍

Saved in:
书目详细资料
Main Authors: Jo`shqin Abdullayev, Ibrokhim Sapaev
格式: 文件
在线阅读:https://doaj.org/article/1cdd7680beae47c4a4109a38c2173bf5
标签: 添加标签
没有标签, 成为第一个标记此记录!

相似书籍