This study provides a detailed analysis of the temperature-dependent electrophysical properties and current-voltage (I-V) characteristics of p-n junction structures based on Silicon (Si) and Gallium Arsenide (GaAs). The investigation spans a temperature range of 0–1000 K, examining key parameters su...
Shranjeno v:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Online dostop: | https://doaj.org/article/1cdd7680beae47c4a4109a38c2173bf5 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|